- Buyers Guide
Where are the emerging RF market opportunities for GaN?
Special Panel Session at IMS 2012
Learn from the experts about GaN market opportunities
Special Panel Session at IMS 2012
Wed. June 20
Palais des Congrès de Montréal
Industry experts from Strategy Analytics, RFMD, Cree, NXP, TriQuint, UMS and Nitronex will make brief presentations about their view on GaN market opportunities followed by a question and answer session with the audience. This event is open to all attendees and complimentary breakfast will be served. Actual presentations from the panel are linked below.
Organized and sponsored by:
Moderator: Patrick Hindle, Techical Editor, Microwave Journal
Market Overview: Eric Higham is the Director for the GaAs & Compound Semiconductor Technologies Service that provides analysis of the dynamics and trends for processes, technologies and components in wired and wireless communications markets. His areas of research include 3G and emerging 4G wireless networks, fiber optic networks, CATV, millimeter wave communications, broadband, military radar, EW and communications applications. After over three decades in the semiconductor field, he brings a deep understanding of the technical and market trends in the GaAs and compound semiconductor sector. Eric holds an MSEE degree from Northeastern University in Boston, MA and a BSEE degree from Cornell University in Ithaca, NY.
Strategy Analytics Presentation from Panel (pdf)
David Aichele is Director, RF Power Business Development at RFMD. Dave joined RFMD in 2004 and has been instrumental in the launch of RFMD’s GaN product portfolio for both commercial and military applications. He has held varying positions at RFMD in high power management including Sales and Marketing, and High Power Design and Application Engineering. Currently, Dave is responsible for product strategies and accelerating adoption of RFMD’s GaN RF Wirelessand CATV product offerings.
Jean Pierre Viaud is the manager of the UMS product business unit. He started his carrier within the THALES group as a microwave engineer and he has been involved in several types of RF design starting from MMIC up to the development of microwave modules for both Radar and Communication systems . After 10 years in THALES Jean-Pierre joined UMS in 2004 as a R/D program manager. In 2008, he took over the management of the product business unit of UMS and has developed a new product line based on UMS GaN technologies. He got his PhD degree in 1996 from the university of Limoges in France.
UMS Presentation from Panel (pdf)
Mark Murphy is Director of Marketing for RF Power products of NXP Semiconductors. He has more than 25 years of experience in the semiconductor industry in different roles. Mark developed BiCMOS processes, led the process development group of a large semiconductor fab and has successfully developed various businesses in the field of RF Power devices based on silicon bipolar and LDMOS technologies, and recently also based on GaN.
Dean White is the TriQuint Integrated Products Business Development Manager. He has a BSEE from the University of Utah and MSEE from the University of Texas at Arlington. He has been involved in the design of attenuators, mixers, phase-shifters, RF switches, low-noise and power amplifiers as well as highly-integrated Transmit/Receive MMICs for communications and radar systems for more than 19 years. Mr. White now manages module business development at TriQuint including marketing responsibilities for the company’s state-of-the-art Integrated Assemblies facility in Richardson, TX.
Jim Milligan is Director, RF and Microwave Products at Cree. Mr. Milligan joined Cree in 1999 where he has held positions of increasing responsibility including the management of Cree’s RF and microwave design group. Mr. Milligan is currently the Director of Cree’s RF and Microwave business segment and is responsible for GaN RF transistor products, MMIC Foundry Services, and new product development activities for commercial and military applications.
Walter Nagy has over 25 years of microwave experience and is a principal engineer at Nitronex Corporation where he has been employed since 2001. In his current role, Walter is the RF technical lead on Nitronex’s 48V GaN product line and supports advance technology development. Walter has designed numerous GaN FETs and packaged discrete devices which are currently in production. Walter has experience with high power Load Pull measurements, nonlinear device modeling, device thermal simulations and device level robustness and reliability testing. Walter’s prior role at Nitronex was in applications engineering where he developed evaluation boards and supported customers for wireless infrastructure and broadband military applications.