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Amplifiers / Materials/Packages / Passive Components / Semiconductors / Integrated Circuits / Subsystems and Systems

Skyworks Powers LG's Record-Selling ShineTM Phone

May 21, 2007
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WOBURN, Mass., May 21, 2007 (BUSINESS WIRE) -- Skyworks Solutions, Inc. (NASDAQ:SWKS), an innovator of high performance analog and mixed signal semiconductors enabling mobile connectivity, today announced that it is supporting LG Electronics' ramp of its record-selling ShineTM handset. The ShineTM, which is LG's second model from its premium Black Label Series, is leveraging the SKY77340, a highly integrated quad-band EDGE power amplifier - used to support the world's largest markets in Europe and the United States. Skyworks' modules are also being utilized across LG's GPRS and CDMA ChocolateTM phones, which have sold ten million units globally since the end of 2005. LG's ShineTM weighs a mere 115 grams, stemming from its unique stainless steel material base. Its numerous features, including expandable memory, an auto-focus, 2.0 megapixel camera, comprehensive media player, Bluetooth and USB connectivity, have also helped fuel its exceptional consumer appeal. "Skyworks is pleased to be supporting LG across a number of their most popular platforms," said Brian M. Daly, Skyworks' vice president of marketing. "Our integrated solutions and strong capabilities across all air interfaces allow LG and other handset manufacturers to produce feature-rich mobile phones with ground-breaking technology and unique design that have proven to be very popular with consumers." LG announced at the end of March 2007 that Shine'sTM sales volume in Europe exceeded the accumulated Shine sales in the Korean market a mere month after its launch. In fact, UK retailer Phones4U named Shine its top-selling phone for the two-week period after its launch, and the handsets are also selling out in France and Germany. About Skyworks' Power Amplifier Module The SKY77340 PAM is designed in a compact form factor for quad-band GSM and EDGE cellular handsets. Two separate heterojunction bipolar transistor (HBT) PA blocks are fabricated onto indium gallium phosphide (InGaP) die. Inputs and ouputs are impedance matched to 50 ohms, and a custom complementary metal oxide semiconductor (CMOS) integrated circuit (IC) provides internal multi function control (MFC) and interface circuitry. The InGaP die, the silicon die, and passive components are mounted on a multi-layer laminate substrate and the assembly is encapsulated with plastic overmold. The circuitry regulates PA-bias conditions, reducing sensitivity to temperature, power supply, and process variation. The enable input signal provides a standby state to minimize battery drain. All of this comes in lead (Pb)-free, restriction of hazardous substances (RoHS)-compliant packaging.

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