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Industry News


March 9, 2011
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M/A-COM Technology Solutions Inc. (M/A-COM Tech) has extended its position in high power semiconductors with the introduction of its first family of Gallium Nitride (GaN) RF power transistors. This new family of products targets S-band radar pulsed applications and leverages M/A-COM Tech's heritage of providing both standard and custom solutions to meet the most demanding customer requirements. M/A-COM Tech's GaN on Silicon Carbide (SiC) products—offered as transistors and pallets—utilize a 0.5 micron HEMT process and exhibit best-in-class RF performance with respect to power, gain, gain flatness, efficiency and ruggedness over wide-operating bandwidths. Featured benefits of M/A-COM Tech's GaN products include high breakdown voltage, superior power density, easy to broadband, high frequency operation and excellent thermal conductivity properties.

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