Richardson RFPD Inc. announced the launch of its SiC Tech Hub, a micro-website featuring the latest news and new product releases related to Silicon Carbide (SiC) technology. SiC offers significant advantages in high power, high voltage applications where power density, higher performance and reliability are of the utmost importance.
Richardson RFPD Inc. announces that it is taking advance orders and offering full design support capabilities for a new family of 48 V gallium nitride-on-silicon (GaN-on-Si) RF power transistors from Nitronex.
Richardson RFPD, Inc. announces immediate availability and full design support capabilities for four new broadband RF gain blocksfrom Analog Devices, Inc. (ADI). The new gain blocks are single-ended RF/IF gain block amplifiers that operate from 30 MHz to 6 GHz and offer up to 24 dB gain and 40 dBm third-order intercept point (OIP3).
Richardson RFPD, Inc. announces immediate availability and full design support capabilities for three new surface-mount technology (SMT) high-power attenuators from Anaren. These 30 to 50 W devicesare high-performance; high-power chip attenuators covering from DC to 3.0 GHz and featuring high return loss and small footprints.