0.1 µm PHEMT Process for E-band Power Applications

To meet the ever-increasing demands of next generation wireless infrastructure, fiber optics and advanced military systems markets, WIN Semiconductors Corp. has developed an ultra-high performance 0.1 µm GaAs PHEMT technology. This device platform, named PP10, is produced on 150 mm GaAs wafers in WIN Semiconductor’s state-of-the-art wafer foundry located...
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