ARTICLES

Analysis and Modeling of the Pads for RF CMOS Based on EM Simulation

The modeling of the test structure of an RF MOSFET, up to 40 GHz, is presented. The size of the pads and the width of the interconnection lines of the test structures are analyzed and optimized based on accurate electromagnetic (EM) simulation in order...
In the past ten years, an interest in more accurate characterization of RF MOSFETs has emerged. The rapid advancement of low-cost CMOS silicon process has made possible the application of CMOS technology at radio and microwave frequencies. When conducting S-parameter measurements of microwave devices directly on a wafer, the...
Read More
See More Videos