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Comparison of Two GaN Transistor Technologies in Broadband Power Amplifiers

This article compares the performance of two different GaN transistor technologies, GaN HEMT on silicon substrate (PA1) and GaN on SiC (PA2), utilized in two broadband power amplifiers operating at 0.7 to 1.8 GHz. The study explores the broadband power...
Phased-array radars, wireless communication transmitters, including public safety radio networks, medical instrumentation and other various traditional civil and military applications, require demanding performance of microwave power transistors. The broadband operating capability is always demanding in various RF circuits and subsystems. Wireless systems deliver high data rate signals to provide...
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