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Single-supply, TTL-level Gate Switching and Radiation Hardening by Design Using E-PHEMTs

Enhancement-mode PHEMTs significantly extend the usefulness of GaAs RFICs for general-purpose RF component designs. To demonstrate the technology’s benefits, this article demonstrates a 2 to 3 GHz GaAs PHEMT RF pulse modulator operating off a single, positive supply voltage, switched by a TTL-level logic signal. Active gate bias networks,...
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