Christopher T. Rodenbeck and Richard T. Knudson, Sandia National Laboratories, Albuquerque, NM

Enhancement-mode PHEMTs significantly extend the usefulness of GaAs RFICs for general-purpose RF component designs. To demonstrate the technology’s benefits, this article demonstrates a 2 to 3 GHz GaAs PHEMT RF pulse modulator operating off a single, positive supply voltage, switched by a TTL-level logic signal. Active gate bias networks,...