Brian Battaglia, Dave Rice, Phuong Le and Mike Purchine, HVVi Semiconductor

Developing Highly Ruggedized Silicon MOSFETs for RF Amplifier Applications

This article describes a new vertical silicon MOSFET that has been developed specifically for high power RF amplifier applications. The High Voltage Vertical Field Effect Transistor (HVVFET™) is engineered with unique structural features that produce h...

January 15, 2009

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High power RF amplifiers are expected to provide high primary performance parameters such as output power, gain and efficiency, as well as operate reliably for more than 20 years in the field. Traditionally, designers have built these amplifiers using components fabricated in cost-effective silicon-based technologies such as bipolar or...

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