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DC to 85GHz TWA and Ka-band 4.9W Power Amplifier Using an Optical Lithography Based Low Cost PHEMT Process

An optical photo lithography based 0.15μm GaAs PHEMT process and 2mil-substrate technology that enables high production throughput and low cost is described.
An optical photo lithography based 0.15μm GaAs PHEMT process and 2mil-substrate technology that enables high production throughput and low cost is described. The developed process achieved Imax=575mA/mm, BVgd=14V, and 753mW/mm of output power density at P-1 condition at 18GHz. Design and test results for DC to 85GHz traveling wave...
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