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Current Switch-off Solution to Protect RF Power Transistors During Measurements

<i>A new security switch called “e-fuse” is presented here. It acts as a fuse in the bias feed, providing very fast switch-off times, thus protecting the device under test and the measurement equipment such as probe tips. It can be applied to FET-type ...
Microwave power transistors today can achieve output power levels greater than 100 W and there is more to come. In most cases, these transistors are also high voltage devices based on Si-LDMOS or GaN. In order to characterize such transistors during development, on-wafer measurements (of sub-cells) are an indispensable...
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