ARTICLES

Dependency of IV Characteristics of a MESFET Device on Frequency and Electric Field

A new automated system for observing the dependence of the IV characteristics of GaAs MESFET devices on electric field, frequency and thermal effects is presented. The new procedure employs a pseudo-random pulse I/V measurement system. The results prov...
In this article, a new pulsed I/V measurement technique for observing the dependence of the IV characteristics of a MESFET device on frequency, electric field and self-heating effects is presented. The results obtained with the new procedure are compared with experimental data obtained with conventional pulsed and static IV...
Read More
See More Videos