ARTICLES

Microwave Noise Modeling for AlGaAs/InGaAs/GaAs PHEMTs

Analytical expressions for the noise parameters of microwave pseudomorphic high electron mobility transistors (PHEMT) are presented in this article. These expressions are derived from an accurate small-signal and noise equivalent circuit model, which t...
Pseudomorphic high electron mobility transistors (PHEMT) have shown excellent microwave and noise performance and are very attractive for millimeter-wave and optoelectronic applications. The complete characterization of these devices, in terms of noise and scattering parameters, is necessary for computer-aided design (CAD) of monolithic microwave integrated circuits (MMIC) or optoelectronic...
Read More
See More Videos