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mmWave Matls

Skin Depth and its Impact on Different RF PCB Structures

Skin depth is often used to describe the behavior of current flow through circuit conductors, i.e., the copper on a PCB, especially at RF/microwave frequencies. Direct current (DC) may exhibit evenly distributed flow through a conductor such as copper, but high-frequency, sinusoidal current experiences changing energy density as it flows through a PCB’s conductors, with areas of lower and higher current density relative to the surface of the conductor.

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Let’s Talk 6G

In June, the first 5G specification was finalized as 5G NR phase I (release 15) and next year will see the completion of phase II for the 5G NR specification. 5G started in the U.S. in Oct this year when Verizon released the first commercial 5G service with the deployment of mmWave Fixed Wireless Access service in several cities. AT&T is starting the deployment of the first standards-based 5G mobile service now and T-Mobile plans to start in the first half of 2019. Although it will be several years before 5G becomes prevalent to the consumer around the world, we have to ask what’s next.

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Exploring the Future of 5G

By Charles Schroeder

Testing 5G components and devices with over-the-air (OTA) methods instead of the cabled methods currently in use will be necessary to validate the performance of 5G technology. As engineering leaders, we need new test methods to ensure the viable commercialization of 5G products and solutions across many industries and applications.

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5G yellow brick road

What We Learned at the 5G Symposium at EDI CON USA 2018

5G mmWave is here!

With 5G mmWave technology already deploying in the US, I was glad to oversee the EDI CON USA 2018 5G Symposium in Oct that included a full afternoon of sessions including topics such as the best RF architectures for 5G, semiconductor tradeoffs for 5G mmWave devices, antenna modeling, simulation of fixed wireless access systems, design of a 28 GHz filter and silicon active antennas for mmWave applications.

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Satellite 5G

5G Satellites: Lost in Space?

The use cases and goals of the 5G initiative are well-known. What might not be as well-known is the role and potential use of satellites in the 5G ecosystem. Afterall, there has not been significant discussion on how satellites fit in. For Release 16, the 3GPP initiated a study item focused on the role of satellites in the 5G ecosystem.

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Auto radar

Finding a Circuit Material for 77 GHz Automotive Radar - Part 2

As explained in the previous ROG Blog, vehicular radars are already being designed and fabricated at millimeter-wave frequency bands such as 77 GHz. Specifiers of circuit materials for millimeter-wave frequencies (30 to 300 GHz) are faced with special requirements that are often different than those for circuits at microwave frequencies of 30 GHz and below. However, practice and experience of circuit designers working at millimeter-wave frequencies has shown that some circuit material parameters can be tightly linked to achieving high performance in millimeter-wave circuits, and that some circuit materials embody the material parameters as needed for excellent performance at 77 GHz and beyond.

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Comsol Array

Comsol 5.4 Enhances RF Capabilities

Extended Materials & RF Part Libraries, Far-Field Analysis Functions

At its annual conference, COMSOL announced the latest version of COMSOL Multiphysics Version 5.4, which in addition to two new products provides performance improvements and additional modeling tools.

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Auto radar

Finding a Circuit Material for 77 GHz Automotive Radar - Part 1

This ROG BLOG is Part One of a two part series introducing the key criteria to consider when selecting a PCB substrate which will minimize circuit losses for 77 GHZ radar PCB antenna applications.  First we will discuss components of PCB circuit loss, and then introduce six key material properties critical to developing low loss millimeter wave circuits at 77 GHz.

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New Thin GaN Structure on SiC Improves RF Performance

SweGaN is a spin-off from Linköping University that recently announced a new GaN-on-SiC HEMT heterostructure, QuanFINE ™, built on the concept of a GaN−SiC hybrid material that combines the high-electron-velocity thin GaN with the high-breakdown bulk SiC. According to their web site, the structure is realized by the company’s unique hot-wall MOCVD process and shown good result in both high-frequency and power transistors. 

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