RFMD’s new RFHA1006 is a wideband power amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two-way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design.
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Richardson RFPD, Inc. introduces a new 80 to 105 GHz balanced low noise amplifier (LNA) from United Monolithic Semiconductors S.A.S. (UMS). The CHA1008-99F is a broadband four-stage monolithic LNA designed for millimeter-wave imaging applications, and is also well-suited for commercial digital radios and wireless local area networks (LANs).
Custom MMIC, a developer of performance driven monolithic microwave integrated circuits (MMICs), is offering two new devices from its growing MMIC design library. The CMD157 (die) and CMD157P3 (packaged) are GaAs MMIC low-noise amplifiers (LNAs) for applications from 6 to 18 GHz.
Richardson RFPD, Inc. today announces immediate availability and full design support capabilities for the newest additions to the family of GaAs pHEMT digital phase shifters from M/A-COM Technology Solutions Inc. (M/A-COM Tech). The MAPS-010145 and MAPS-010165 are, respectively, 4 and 6-bit packaged devices that maintain low phase error and minimal attenuation variation over the full 360 degrees and 3.5-6 GHz frequency range.
Hittite Microwave Corp., the world class supplier of complete MMIC based solutions for communication & military markets, is pleased to announce the release of the May 2012 Selection Guide which summarizes over 1025 products including 21 new products.
RFMD’s new RFSW6131 is a GaAs pHEMT single-pole three-throw (SP3T) switch designed for use in cellular, 3G, LTE, and other high performance communications systems. It offers a symmetric topology with excellent linearity and power handling capability, while also 3 V and 5 V positive logic compatible.
RFMD’s new RFFM7600 FEM for 2.5 to 2.7 GHz LTE/WiMAX contains a power amplifier with Tx harmonic filtering and Tx/Rx switching. RFFM7600 is provided in a 6 mm x 6 mm laminate package, incorporating surface mounted devices for filtering and matching.
The RF65x9 series of Transmit/Receive Modules integrate a complete solution in a single front-end module (FEM) for AMI/AMR and smart grid solutions. The FEMs integrate a PA, transmit (Tx) filtering, input and output switches, a Tx or receive (Rx) attenuation path, and an LNA with bypass mode.
Richardson RFPD Inc. announces availability and full design support capabilities for a pair of new InGaP HBT amplifiers from Freescale Semiconductor, Inc. The MMZ09312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier that is suitable for applications with frequencies from 400 to 1000 MHz. The MMZ25332B is a high efficiency InGaP HBT amplifier that is suitable for 2400 MHz ISM applications.
PMI Model BRF17D6G-20M-CD-1 is a band reject "notch" filter having a pass band of DC to 17.47GHz and 17.77 to 20 GHz and over 40 dB of rejection at 17.59 to 17.61 GHz. Insertion loss in the pass band is less than 5 dB and VSWR is better than 2.0:1. This filter is supplied with SMA female connectors and the size is 1.5" x 0.5" x 0.68".