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The 8T79S308 is designed for distribution and fanout of high-frequency clocks or low-frequency synchronization signals in either baseband or RF sections of wireless infrastructure radios.
Anokiwave announced the worldwide release of the 2nd-generation K/Ka-Band SATCOM Beamformer IC family for the design and commercial deployment of phased array based ground terminals.
The BLC2425M10LS500P is a 32 Volt LDMOS power transistor for use in commercial and consumer cooking, industrial, scientific and medical applications at frequencies from 2400 to 2500 MHz.
Fairview Microwave’s PIN diode waveguide switches feature fully integrated WR10 and WR12 waveguide ports that support a UG387/U flange and cover E-band (60 to 90 GHz) and W-band (75 to 110 GHz) frequencies.
Qorvo’s QPB9320 integrates a two-stage LNA and a high power switch that provides power handling up to 52 W of average power. Supporting applications across a frequency range of 1850 to 2025 MHz.
Anritsu Company introduces 64-Gbaud PAM4 PPG and 32-Gbaud PAM4 ED modules supporting 400 GbE and Over 400 G bit error rate (BER) tests for its Signal Quality Analyzer-R MP1900A BERT.
Integra Technologies offers GaN-on-SiC HEMT transistor evaluation kits to designers evaluating this technology for their high power amplifier designs. Each kit is customized to include a designer’s transistor model of choice.
Greater efficiency and output power are proposed by providing a uniform depletion region along the channel to avoid pinch-off. A bias network to achieve this condition is described for a field-effect transistor (FET) with a segmented gate.
RFMW Ltd. introduced a high-performance, X-band, T/R module. The Qorvo QPM1002 incorporates a T/R switch, low noise amplifier and performs well in high temperature environments due to 0.25 um GaN-on-SiC fabrication.
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