Semiconductors / Integrated Circuits - Articles - Page 66

Cree Launches Commercial SiC Power MOSFET

January 24, 2011

Cree Inc. , a leader in silicon carbide (SiC) power devices, has introduced a fully-qualified commercial silicon carbide power MOSFET. This establishes a new benchmark for energy efficient power switches and can enable design engineers to develop high voltage circuits with extremely fast switching speeds and ultralow switching losses....

Hittite Acquires Arctic Silicon Devices, a Mixed-Signal IC Company

January 19, 2011

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Summit Partners Invests in M/A-COM Technology Solutions

January 18, 2011

M/A-COM Technology Solutions

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Growth equity investor Summit Partners announced an investment for a minority stake in M/A-COM Technology Solutions Holdings Inc. , a supplier of semiconductors, active and passive components, and sub-assemblies for use in radio frequency, microwave and millimeter-wave applications. Financial terms of the transaction were not disclosed. M/A-COM Tech provides...

RFMD PowerSmart Platforms Achieve 4G Performance Milestone

RF Micro Devices (RFMD) announced a major performance milestone related to its PowerSmart™ power platforms, a new product category that the company believes will reshape the future of multimode, multi-band cellular RF architectures.

January 18, 2011

David Vye

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Based on independent product testing, the PowerSmart power platforms achieved HSPA+ 4G data upload speeds while drawing approximately 15% less current than competitive solutions. Product qualification tests, which are routinely performed to evaluate each new cellular product’s front end, transceiver and baseband, are currently being conducted in support of...

Power Amplifier: AMF-4D-02002650-90-20P

January 17, 2011

MITEQ Inc., Hauppauge, NY

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NPR132 MITEQ Inc. introduces Model AMF-4D-02002650-90-20P to its family of rugged, single bias ultra-broadband coaxial amplifiers. This amplifier has over 25 dB of gain from 2.0 to 26.5 GHz, in a housing that is only 1" long and 0.83" wide without the field replaceable 2.92 mm connectors.

Line Amplifier: Model AMF-6F-17702200-50-17P

January 17, 2011

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This model is a coaxial and compact Ka-Band line amplifier. This LNA has over 35 dB of gain from 17.7 to 22.0 GHz, in a housing that is only 0.72” long and 0.75” wide

VCOs: MAOC-009871, 009872, 010334

January 17, 2011

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M/A-COM Technology Solutions announces new additions to family of voltage controlled oscillators. The VCOs deliver low phase noise, wide tuning range, and low current consumption.

Direct Conversion Receiver : HMC6383

January 17, 2011

Hittite Microwave Corp.

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10-19-2011_hmc6383_pr100 Hittite announces the release of the HMC6383 , a high-performance, flexible, direct conversion receiver (DCR) radio design platform that can be configured on-the-fly. Fully field programmable, the HMC6383 platform is designed to serve as a receiver subsystem building block for various applications including cellular basestations, microwave radio, adaptive IF strips, wireless LAN, software defined radio and test equipment.

Termination 32M7200F

January 17, 2011

Florida RF Labs/EMC Technology

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Term32M7200F Florida RF Labs has introduced a high performance, flange mounted, 800 W termination. The 32M7200F offers outstanding performance and low VSWR and the convenience of bolt on installation. This termination has been optimized for performance in the DC-0.5 GHz frequency range.