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Richardson RFPD, Inc. announced the availability and full design support capabilities for a new GaN high-power amplifier from United Monolithic Semiconductors.
An international research team at WPI-MANA has used a transmission electron microscope (TEM) to create a 2.8 nm transistor consisting of nanochannels embedded in metallic carbon nanotubes (CNTs), which exhibits quantum transport at room temperature.
3DGaNTMinnovators Finwave Semiconductor, Inc.ctor, Inc. announced a $12.2 million Series A funding round to expand the company’s team, product development activities and lab facilities.
IQE plc announced that it has filed a lawsuit against Tower Semiconductor, as IQE has significant evidence that Tower misappropriated IQE’s trade secrets to unlawfully obtain patents on IQE’s technology.
In a new partnership, Indium Corporation and SAFI-Tech will evaluate market applications for supercooled solder materials and explore the development of new products.
The 68th annual IEEE International Electron Devices Meeting (IEDM), the leading forum for the unveiling of breakthroughs in transistors and related micro/nano technologies, will be held December 3-7, 2022 in San Francisco.
STMicroelectronics and GlobalFoundries Inc announced they have signed a Memorandum of Understanding to create a new, jointly operated 300 mm semiconductor manufacturing facility.
Keysight Technologies, Inc. announced that Keysight's PathWave RFPro, integrated with the Synopsys Custom Compiler design environment, is enabled to support TSMC's newest N6RF Design Reference Flow.
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