Buyer's Guide

RFMD achieves ISO/TS 16949 certification

RF Micro Devices, Inc. announced it has been granted ISO/TS 16949 certification. The ISO/TS 16949 certificate is the highest international quality standard for the automotive industry, and ISO/TS 16949 certification demonstrates RFMD’s commitment to excellence in product design and manufacturing processes for automotive applications.


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Agilent to demo new test solutions at CTIA

Agilent Technologies Inc. will demonstrate its high-performance test and measurement solutions at the CTIA Wireless show, May 8-10, at the Ernest N. Morial Convention Center (Booth 3935) in New Orleans. The company’s new solutions provide greater insight into devices being designed and tested, accelerating the development of the latest wireless technologies, including LTE, LTE-Advanced, GNSS, DC-HSDPA, 802.11ac WLAN and femtocells.


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RFMD adds four new high linearity, low noise I/Q converters

Four new MMIC Upconverter and Downconverter devices from RFMD offer high performance and low cost for high frequency applications. The RFUV1002 and RFUV1003 Upconverters incorporate an image rejection mixer, LO buffer amplifier, variable gain amplifier, and DC-decoupling capacitor. The RFRX1001 and RFRX1002 Downconverters incorporate an image rejection mixer, LO buffer amplifier, integrated LNA, and DC-decoupling capacitor. Each device is packaged in a 5 x 5 mm QFN to simplify both system-level board design and volume assembly.


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Ka-Band LNA MMIC

MMICS&More

CMD162-PRCustom MMIC is offering a new device from its growing MMIC design library. The CMD162 is a GaAs MMIC low-noise amplifier (LNA) chip for applications from 26 to 34 GHz. Optimized for 30 GHz satellite communications, the CMD162 boasts a typical noise figure of 1.7 dB with a small-signal gain of 22 dB and an output 1 dB compression point of +7 dB.


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Richardson RFPD introduces new GaN on SiC M/A-COM Tech power transistors

Richardson RFPD Inc. announces immediate availability and full design support capabilities for eight devices representing the new gallium nitride (GaN) on Silicon Carbide (SiC) family of power transistors from M/A-COM Technology Solutions Inc. This product family targets L- and S-Band applications from 960 to 3500 MHz and reinforces M/A-COM Tech's rich heritage of leadership in power hybrid technology.


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