Amplifiers and Oscillators

Small Cell Power Amplifiers: TQP2451 / TQP2453

TQP2451 and TQP2453RFMW, Ltd. announces design and sales support fortwo “small cell” power amplifiers from TriQuint. The TQP2451 and TQP2453 support 1900 and 1800 MHz transmitter designs respectively. With average power output of 2.5 W, both devices include 3 gain stages, the final stage being a Doherty design for high peak power performance up to 20 W.


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GaN Amplifier: TGA2583-SM

TGA2583-SMRFMW Ltd. announces design and sales support fora high gain, 10 W GaN amplifier targeted at S-band RADAR applications. The TriQuint TGA2583-SM offers 33 dB of gain and >50% PAE from 2.7 to 3.7 GHz. Saturated output power is rated at 40.5 dBm from a 25 to 32 volt supply providing 175 mA.


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Four GaN Power Amplifiers

TriQuint_S_Band_PR_PhotoIdeally suited for commercial and military S-band radar applications Richardson RFPD Inc. announces full design support capabilities and immediate availability of four new gallium nitride on silicon carbide (GaN on SiC) power amplifiers (PAs) from TriQuint. The new S-band amplifiers are fabricated on TriQuint’s production 0.25 μm GaN on SiC process (TQGaN25).


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Monolithic Amplifier: AVM-273HP+

AVM-273HP+Mini-Circuits AVM-273HP+ is a three-stage balanced, wideband monolithic amplifier delivering up to 0.5 W power and operating over 13 to 26.5 GHz. It is designed using PHEMT technology and is unconditionally stable. Its outstanding isolation enables it to be used as a wideband isolation amplifier or buffer amplifier in a variety of microwave systems.


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GaN Amplifier: TGA2237

TGA2237RFMW Ltd. announces design and sales support for TriQuint’s 30 MHz to 2.5 GHz TGA2237 with >52% PAE. The TGA2237 offers 10 W saturated power with 13 dB of large signal gain. P1 dB is rated at >32 dBm with a small signal gain of 19 dB. TriQuint’s TGA2237 operates from a 30 V supply and uses only 360 mA of current.


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GaN Power Amplifier: TGA2576-2-FL

TGA2576-2-FLRFMW Ltd. announces design and sales support forthe TGA2576-2-FL from TriQuint. This 2.5 to 6 GHz GaN power amplifier provides 40 W of saturated output power with power added efficiency (PAE) of 36%. Suitable for EW, Radar, test instrumentation, communications systems or as an EMC amplifier, the TriQuint TGA2576-2-FL operates at 30 V and 1.55 A from its bias supply.


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Reference Solution: RF Power Amplifier Test

ReferenceSolutionAgilent Technologies Inc. announced the availability of  Reference Solutions, a combination of hardware, software and measurement expertise that delivers the essential components of electronic test systems. Reference Solutions also include utilities such as example program source code - highly optimized for specific applications - which show users how to get the most out of their test system.


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GaN LNA: TGA2612

TGA2612RFMW Ltd. announces design and sales support for the TGA2612 from TriQuint. Optimized for performance from 6 to 12 GHz, the TGA2612 features >22 dB small signal gain with 20 dBm P1dB. Noise figure is <1.8 dB while OIP3 is an industry leading 29 dBm. To simplify system integration, the TriQuint TGA2612 is fully matched to 50 ohms with integrated DC blocking caps on both input and output ports.  


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