Articles Tagged with ''semiconductor''

NXP Semiconductors and Datang Telecom Technology Co. Ltd. have established a joint venture that is claimed to be the first true automotive semiconductor company in China.

Soitec (Euronext) and SunEdison Inc. announced that they have entered into a patent cross-license agreement relating to silicon-on-insulator (SOI) wafer products. The agreement provides each company with access to the other’s patent portfolio for SOI technologies and ends all outstanding legal disputes between the companies.

Peregrine Semiconductor Corp. announces the UltraCMOS 10 platform, the newest advancement in Peregrine’s UltraCMOS technology. UltraCMOS 10 RF SOI delivers both flexibility and unparalleled performance for addressing the ever-increasing challenges of RF front-end design.

Richardson RFPD Inc. announces its attendance and participation at the 2013 International IEEE COMCAS. The annual conference provides a multidisciplinary forum for the exchange of ideas, research results, and industry experience in the areas of microwaves, communications, antennas, solid state circuits, electromagnetic compatibility, electron devices, radar and electronic systems engineering.

The worldwide semiconductor market is expected to grow 3% from 2012 to 2013. There has been sequential market growth from 1Q13 to 2Q13 and the vast majority of the top 20 vendors are expecting 3Q13 to grow revenues again.

Mobile Experts has released updated base station and transceiver forecasts, which indicate a major disruption in the market for China Mobile TD-LTE production. RF semiconductor suppliers are ramping up production which corresponds with delivery of 207,000 TD-LTE base stations. However, despite widespread media reports that 200,000 base stations will be deployed during 2013, industry semiconductor suppliers indicate that production and deployment limitations will stretch deliveries over a period of roughly 18 months.

RFMW Ltd. announces design and sales support fora 6 GHz single-pole, triple throw (SP3T) switch from TriQuint Semiconductor. The TQP4M0011 is controlled using positive DC voltages from 1.8 to 5 volts.

Hesse Mechatronics Inc., the Americas subsidiary of Hesse GmbH, leading manufacturer of high-speed fine pitch wedge bonders and fully automatic heavy wire bonders for the backend semiconductor industry, recently opened its newest training and applications lab in Tempe, AZ.

Cascade Microtech Inc., a leader at enabling precision measurements of integrated circuits at the wafer level, and imec, a world-leading nanoelectronics research center, announced breakthroughs in probing stacked integrated circuits (3D-SICs), fueling an important growth engine for the semiconductor market.

Fujitsu Semiconductor Europe (FSEU) announced the release of MB51T008A, a silicon substrate-based, GaN power device that features a breakdown voltage of 150 V.