Richardson Electronics Ltd. announced it has signed a global distribution agreement with HVVi Semiconductors Inc., Phoenix, AZ, to distribute its RF power transistors, based on HVVi’s innovative, new HVVFET™ architecture.

HVVi recently announced the first major advance in silicon RF power transistor design in more than 15 years. Based on the world’s first High Voltage Vertical Field Effect Transistor (HVVFET), this new architecture delivers frequency bandwidth, voltage and power levels to radar and avionic applications with improved performance—reducing overall part count and enhancing cost efficiencies.

“We pride ourselves on working with the industry’s leading-edge suppliers to bring pioneering technology to the market. With HVVi's innovative geometries, they fill a void in the Avionics transponder and Ground-based radar markets. Gain, efficiency and load-pull survivability are just a few of their attributes,” said Chris Marshall, vice president of Richardson Electronics’ Wireless and Broadband Communications Group. “HVVi’s agile design assistance is expedient and thorough. We welcome this opportunity to help our customers find alternative design solutions.”

HVVi recently introduced its first three products based on the HVVFET architecture: the HVV1011-300, HVV1214-075 and HVV1214-025. Targeted at high power, pulsed RF applications in the L-band such as IFF, TCAS, Mode-S, TACAN and ground-based radar; the three new devices leverage the inherent benefits of the HVVFET process to deliver high output power and high gain in an extremely compact package. All three transistors are designed to operate at 48 V.

“Richardson’s experienced global technical sales force is able to accelerate the launch of our breakthrough HVVFETs to the RF power market,” said Chris Link, director of Global Sales at HVVi. “Our HVVFET architecture offers best-in class performance and minimizes overall system size and costs. Working with Richardson, we can minimize customer design-in cycles, a critical requirement for success in major programs. This relationship will continue the Richardson tradition of introducing leading edge technology to the market.”

To learn more about the new HVVFET power transistors, visit Richardson Electronics (Booth 1626) or HVVi (Booth 223) at the IEEE MTT-S International Microwave Symposium in Atlanta, GA, June 15-20, 2008.