WIN Semiconductors Corp. announced the successful qualification of NP12-0B for 40 V operation. This 0.12 μm gate-length GaN-on-SiC technology integrates multiple transistor improvements providing high ruggedness when operated in deep-saturation/high-compression pulsed and CW conditions. These enhancements proved so effective that NP12-0B has now satisfied qualification testing for reliable 40V operation of power amplifier, T/R switch and single-chip front-end MMICs.
NP12-0B is a rugged, versatile platform and provides the unique set of capabilities of high output power, low insertion loss switching and low noise figure, expanding the performance envelope of this platform. Enabling high performance amplifiers, output transistors tuned for maximum power at 18 GHz and 40 V provide 7.9 W/mm Psat, 13.3 dB gain and 42 percent PAE. When tuned for maximum PAE, the same power cell exhibits 6.1 W/mm Psat, with 14.6 dB gain and 55 percent PAE at 18 GHz. When used in a switch configuration, common-gate devices show insertion loss below 0.4 dB, power handling greater than 42 dBm, with sub 20 nS switching speed using a 40 V control voltage. Adding to its power capabilities, NP12-0B also provides excellent noise figure with typical Fmin of 1 dB with 10 dB associated gain at 20 GHz. The comprehensive set of performance capabilities and reliable 40V operation greatly expands the trade-space for high performance front-end products used in next generation radio access networks, satellite communications and radar systems.
The NP12-0B platform has been in production since 2024 and is available with the Enhanced Moisture Ruggedness option which provides excellent humidity resistance for use in plastic packaging. The updated 40 V Process Design Kit (PDK) supporting PA, switch and LNA designs will be available for customer download in Q2 2026.
To learn more about NP12-0B and WIN’s entire GaN, GaAs and InP technology portfolio, visit booth# 23048 at the 2026 IEEE MTT-S International Microwave Symposium being held in Boston, Mass., June 7-12, or contact WIN Semiconductors.