pSemi® Corporation unveiled its latest breakthrough in RF silicon-on-insulator (SOI) platform technology: UltraCMOS+™. Advancing the performance of legacy and patented UltraCMOS® technology, UltraCMOS+ enables pSemi to offer the next generation of monolithic integration with vast improvements in power handling, linearity, isolation, RON, COFF, integrated intelligence and ultimately portfolio expansion.
As the single source of advanced silicon-on-sapphire (SOS), pSemi has developed a unique team of process engineers, IC designers and software engineers to advance the technology. The result is the development of the UltraCMOS RF SOI platform, which includes proprietary semiconductor processes, product development kits, simulation software and unique circuit techniques.
Over the last decade, pSemi transitioned its focus from SOS to SOI but maintained its unique team and continued the advancement of UltraCMOS. The pSemi team and company culture enabled the rapid development of 16 generations of UltraCMOS, expanding the usage model while also optimizing performance for targeted RF functions.
“The introduction of the UltraCMOS+ platform represents a decade of advancements that were delivered to our internal parent company Murata,” says Rodd Novak, vice president of sales and marketing, pSemi. “Launching this next-generation platform to our historical markets will once again change the way our customers design and architect their RF products.”
pSemi will release its first broad-market products based on the UltraCMOS+ platform at the 2025 International Microwave Symposium (IMS), to be held June 15–20, 2025, in San Francisco. Please stop by booth #443 to see live demonstrations and learn more about their RF solutions.