Tower Semiconductor announced its participation in the upcoming International Microwave Symposium (IMS) 2025, taking place June 16–21 in San Francisco, Calif., highlighting its advanced RF and HPA technology platform and latest advancements in RF switch technology. As part of the event’s technical program, Tower will present a jointly developed white paper with pSemi, titled “A Low-Loss, Wideband, 0–110 GHz SPDT Using PCM RF Switches with Integrated CMOS Drivers” nominated for the Best Industry Paper Award at IMS2025.

This paper highlights a record-breaking wideband single-pole, double-throw (SPDT) switch utilizing Tower Semiconductor’s monolithically integrated PCM RF switches in an RFSOI CMOS process. The key features include ultra-wideband performance (true DC to 110 GHz with less than 2 dB of insertion loss), digital control using integrated CMOS drivers with MIPI RFFE interface (available in the PDK), 30 dBm measured power handling, and 15-20 dB better linearity performance than RFSOI CMOS SPDTs currently available. This combination of ultra low-loss wideband performance, power handling, and full CMOS/digital integration simplifies implementation for end users and enables advanced circuits for 5G, future 6G, SatCom, beamforming, and millimeter-wave applications.

Presentation schedule:

A Low-Loss, Wideband, 0-110 GHz SPDT Using PCM RF Switches with Integrated CMOS Drivers

By Dr. Nabil El-Hinnawy, Principal R&D Engineer, Tower Semiconductor

As part of the Th1B session: Innovative RF Switches, Varactor and Modulator Technologies.

• Date & Time: June 19, 2025 at 8:20AM
• Location: 205

To meet with Tower’s engineering team during the conference, visit the Company’s booth #655.