The GRF0030D from Guerrilla RF is a bare die, high performance GaN-on-SiC HEMT. It supports DC to 6 GHz applications requiring pulsed, CW and linear operation modes. The GRF0030D is also suitable for operation using 50 V or 28 V supply rails.

GaN has many desirable characteristics compared to alternative transistor technologies. These include higher power density, lower output capacitance and increased breakdown voltage. These characteristics combine to improve efficiency and bandwidth in compact application-level footprints. The transistor delivers up to 50 W peak power and greater than 60 percent peak drain efficiency when operated from a 50 V supply rail. The transistor exhibits a 150 V breakdown voltage, 225°C maximum junction temperature and a 10:1 VSWR capability, suitable for operation in demanding environments.

The GRF0030D is supported with S-parameter and load-pull data measured in a 3 mm x 3 mm QFN16 package from 1 to 6 GHz at 50 V and 28 V drain voltages. The GaN-on-SiC bare die transistor is well-suited for compact, rugged, high-efficiency applications. This makes the device ideal for S-Band (2 to 4 GHz) and lower C-Band (4 to 6 GHz) radar, communications and instrumentation applications.

Guerrilla RF provides high performance MMICs and their cores form the backbone of today’s state-of-the-art RF and microwave communication systems. Each RFIC is tailored to meet the demanding requirements of wireless infrastructure-grade applications found in 5G, automotive connectivity, cellular boosters and DAS, military radios and wireless audio. Guerrilla RF’s passion for creating the very best RFICs has led directly to their success as one of the fastest-growing semiconductor firms in the industry.

RFMW
San Jose, Calif.
www.rfmw.com

Guerrilla RF
Greensboro, N.C.
www.guerrilla-rf.com