MicroMetrics, Londonderry, NH, is featuring high power PIN diodes at this year's IEEE Radio and Wireless Symposium and Exhibition in Long Beach, CA. The structures consist of a P+ layer of carrier concentration >1020, an intrinsic layer >3000 ohm cm and a substrate >0.001 ohm/cm. The intrinsic layer is varied depending upon the voltage, lifetime, switching speed and series resistance. The >3000 ohm cm intrinsic layer produces a larger mesa diameter for a given capacitance value enhancing the power handling capability of these devices. This creates a diode structure that is ideal when power handling is a primary concern. The ceramic passivation enables the user to put the diode chip directly onto a substrate, or the devices can be packaged in various configurations offered by the company.