As demonstrated in Figure 5(a), the two TPs can be controlled by keeping L1 constant and varying the value of W1. This process helps to determine an optimized bandwidth in the design. In Figure 5(b), reducing the value L1 from 278 to 218 μm results in the notch frequency shifting from 64 to 80 GHz. These results indicate that the frequency bandwidth of operation can be fully controlled in addition to the bandwidth. More importantly, the stopband attenuation level can also be optimized by adjusting the locations of the two TPs. Depending on the design specifications, the design trade-offs between high stopband attenuation and wide stopband bandwidth can be controlled by simply tuning these two variables.

Figure 5

Figure 5 EM simulation results sweeping W1 (a). EM simulation results sweeping L1 (b).

Figure 6

Figure 6 Die microphotograph of the designed dual-mode BSF.

MEASUREMENTS

Figure 7

Figure 7 Measured S-parameters results for the dual-mode BSF (a). Measured group delay results for the dual-mode BSF (b).

To evaluate the performance of the presented dual-mode BSF, a prototype was fabricated in 0.13 μm SiGe technology. The die microphotograph is shown in Figure 6. Excluding the testing pads, the die size is only 0.11 × 0.248 mm. The S-parameter measurements were conducted with on-wafer ground-signal-ground (GSG) probes up to 110 GHz using an N5290A vector network analyzer from Keysight and 100 μm pitch GSG Infinity Probes with 1 mm connectors from FormFactor, Inc. The on-wafer calibration was made by using a conventional short-load-open-thru (SLOT) method to move the reference plane from the connectors of the equipment to the tips of the RF probes.

The simulated and measured power transmission and the group delay responses of the prototype are compared in Figure 7(a) and Figure 7(b). As observed, there is close agreement between predicted and experimental results. The minor discrepancies observed between simulated and measured power-reflection levels are attributed to the probes and GSG pads, which were not considered in the simulation process due to the increased computational cost.

Table 1 compares the results of this work to other similar efforts. As shown, this design has achieved the highest stopband attenuation and the widest stopband bandwidth while still maintaining a small footprint. These comparisons to other state-of-the-art designs demonstrate the overall performance improvement of the designed BSF.

CONCLUSION

An mmWave dual-mode BSF has been designed using 0.13 μm SiGe technology. The theoretical analysis of this design has been presented and validated through EM simulation. In addition, the fabricated BSF shows close agreement between EM simulation and measured results. These measured results show that the presented design has in-band suppression of more than 30 dB and low out-of-band insertion loss.

Table 1

ACKNOWLEDGMENTS

This work is supported by the Southern Marine Science and Engineering Guangdong Laboratory (Zhanjiang) under contract No. ZJW-2019-04. This is a key project of Guangdong Province for promoting high-quality economic development (Marine Economic Development) in 2022: Research and development of key technology and equipment for Marine vibroseis system (GDNRC[2022]29).

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