Nxbeam, a developer of advanced RF semiconductor products, has released its second-generation Ku- and Ka-Band GaN MMIC power amplifiers. Developed primarily for satellite communication terminals, these four new MMICs provide excellent output power, gain and efficiency in a small form factor. The power amplifiers are fabricated with a high reliability, 0.2 μm GaN on SiC process.
Product samples will be available as die starting in June 2021, with packaged versions shortly thereafter.
Nxbeam was founded in 2018, aiming to deliver a new generation of wireless communications products for information communication applications. The company specializes in IC design using GaN and InP device technologies.