BeRex Launches a New Generation of Power GaN Transistors

BeRex has launched a family of three power GaN FETs, the BCGxxx series, providing output powers of 2, 4 and 8 W at 12 GHz and biased at 28 V. Available as bare die, the devices have a nominal gate length of 0.15 µm and gate widths of 480 to 1200 µm.

These GaN transistors offer improved current efficiency with excellent gain and power performance, according to BeRex, and they are well-suited for C-, X-, Ku- and K-Band amplifiers.

The BCGxxx GaN family comprises the BCG002, with 2 W output power; the BCG004, with 4 W output; and the BCG008, with 8 W output.

These devices were designed in the U.S. and fabricated with metallization and SI₃N₄ passivation to assure the highest reliability suitable for commercial or military applications, according to the company.

BeREx says the BCGxxx series is competitively priced and in production. Samples are available for evaluation.

“The new BCGxxx family of GaN chips represents our ongoing commitment to providing GaN products for some of the world’s most demanding commercial and military applications.” said Dr. Alex Yoo Ph.D., president of BeRex.