Integra Technologies announced 135 and 130 W GaN on SiC transistors for S-Band radar.

Matched to 50 Ω, the IGT2731M130 delivers a minimum of 130 W peak pulsed power, a drain efficiency of 55 percent and 13.5 dB gain, with a 300 µs and 10 percent duty cycle pulse. The GaN HEMT operates across an instantaneous operating frequency range from 2.7 to 3.1 GHz. A depletion-mode device, it requires a negative gate bias and bias voltage sequencing.

The IGT3135M135 operates across the instantaneous frequency range from 3.1 to 3.5 GHz and delivers up to 135 W peak pulsed power. This device is also matched to 50 Ω and requires a negative gate bias voltage and bias voltage sequencing.

Both GaN HEMTS are fabricated with gold metallization and are assembled using chip-and-wire technology. They are housed in Integra's PL44A1 metal-based package and sealed with a ceramic-epoxy lid. The flange package measures 0.8 in. (20.32 mm) wide and 0.4 in. (10.16 mm) long. The earless package is 0.4 in. (10.16 mm) wide and 0.4 in. (10.16 mm) long.