Custom MMIC announces their attendance at European Microwave Week 2017 (EuMW) in Nuremberg, Germany, October 8 through 13. Custom MMIC representatives will be excited to meet with customer to discuss the latest developments in GaAs and GaN RF/microwave MMICs, including ultra-wideband amplifiers, mixers, low noise amplifiers (LNA), low-phase noise amplifiers (LPNA) and more, at Stand 113B.

Nicholas Novaris, a lead engineer with Custom MMIC, will also be presenting a paper titled, “Understanding the Phenomenon of High-Power Pulse Recovery in GaN LNAs.” The paper explores and details the high-power pulse recovery behavior of commercially available GaN LNAs under overdrive conditions. This topic has become pertinent as GaN LNAs, with comparable noise figures to common GaAs LNAs, are capable of withstanding high input power levels without the need for additional and performance degrading limiter circuitry, unlike GaAs LNAs. Such robustness is attractive for defense applications, as military and aerospace receiver systems are often subject to jamming signals, and may be in close proximity to high-power transmitters. Custom MMIC has discovered, however, that even though GaN LNAs can withstand the high-power interfering inputs, when the interference signal is removed rapidly, residual distortion occurs until the device recovers. Advancing on past research, Custom MMIC engineers subjected GaN LNAs to non-coherent jamming signals with varying duration and intensity. It was discovered the recovery time exhibited radical relationship related to the input power. Moreover, the input action also significantly impacted the pulse recovery time.

Nicolas Novaris will be sharing the results of this study Wednesday, October 11, at 2:10 p.m. in the Kiew room, as part of the EuMC28 sessions on amplifiers and receivers.