Design is optimized to drive SiC devices at a high speed with desaturation protection

Richardson RFPD Inc. announced the availability and full design support capabilities for a SiC MOSFET driver reference design from Microsemi Corporation.

The MSCSICMDD/REF1 is designed to provide a reliable reference driver solution, a means of evaluating silicon carbide MOSFETs in a number of different topologies, as well as a means to assess device performance for parametric test purposes. The new evaluation board requires only a +24 V power input and is optimized to drive SiC devices at a high speed with desaturation protection. It is a base design that can be simplified depending upon the individual system requirements.

According to Microsemi, additional key features of the MSCSICMDD/REF1 include:

  • Adjustable -5 V to +20 V output gate drive
  • Galvanic isolation of more than 2000 V on both gate drivers
  • Capable of 6 W of gate drive power per side; 8 W with modification
  • Peak output current of up to 30 A
  • Maximum switching frequency greater than 400 KHz
  • Single-ended or RS485/RS422 differential input gate control
  • Shoot through (short-circuit) protection
  • +/- 100 kV/µS capability
  • Programmable dead time protection
  • Fault signaling
  • Under-voltage lockout protection

To find more information, or to purchase this product today online, please visit the MSCSICMDD/REF1 webpage. The device is are also available by calling 1-800-737-6937.

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