MMIC Power Amplifier Chips
The TGA1073A, B, C and G power amplifier MMIC devices cover the 19 to 41 GHz frequency band and were designed using the company’s 0.25 mm power pHEMT GaAs production process to provide the highest possible millimeter-wave performance. These devices may be operated at drain bias voltages between +5 and +7 V and address transmission requirements for point-to-point microwave radios in the 23, 26, 30 and 38 GHz bands; point-to-multipoint microwave radios in the 23 and 38 GHz bands; and local multipoint distribution systems in the 27 to 31 GHz bands.
TriQuint Semiconductor Inc.,
FET Bias Controller ICs
The ZNBG 3000, 4000 and 6000 series FET bias-controller ICs are designed to provide all the bias requirements of GaAs and HEMT FETs in point-to-point microwave applications and can handle up to three, four or six FET stages, respectively. Operating from a single positive supply, the ICs generate the negative 3 V rail required for FET gate biasing. In order to further optimize circuit performance, the ZNBG controller also enables designers to split the control conditions of individual FET gate stages. The developing FET controller families are currently available in two variants: The ZNBG3000/4000 and 6000 devices deliver 2.2 V drain while the ZNBG3001, 4001 and 6001 provide 2.0 V. Price: $1.65 to $2.85 (10,000). Delivery: eight weeks.