Northrop Grumman Corp. announced the availability of two new GaN power amplifiers at the International Microwave Symposium 2016 (IMS) in San Francisco, Calif.
These GaN power amplifiers offer high power output for the 24 to 28 GHz band, for applications including satellite communications terminals, point–to-point and point-to-multipoint digital radios.
The first new product, APN243, is a balanced high power amplifier that has 20 dB of linear gain and a saturated output power of 40.5 dBm, with a power-added efficiency (PAE) greater than 27 percent. The second, APN244, is the single-ended version of the APN243, with 20 dB of linear gain and a saturated output power of 38 dBm and PAE greater than 31 percent.
“Northrop Grumman is known for our high quality, high power amplifiers and these two products will allow our customers to expand into the 24 to 28 GHz frequencies,” said Chris Brown, general manager, microelectronics products and services, Northrop Grumman.
Also at IMS, Northrop Grumman engineers presented papers on high power and high efficiency chip sets for Ku-, Ka-, V-, Q-, E- and W-Band communications and on optimizing ground-, airborne- and space-based communication links using Northrop Grumman’s advanced semiconductor products and technologies.
More information on silicon-based devices, including radiation hardened devices, and the GaAs, InP and GaN product lines are available online at www.as.northropgrumman.com\IMS. Limited engineering prototype samples are available from stock to qualified customers by contacting MPS at as-mps.sales@ngc.com