Richardson RFPD Inc. announced the availability and full design support capabilities for a new discrete GaN on SiC HEMT from TriQuint / Qorvo.
The 55 W (P3dB) T2G4005528-FS operates from DC to 3.5 GHz and is constructed with TriQuint’s TQGaN25 production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
The new device is ideally suited for military and civilian radar, professional and military radio communications, test instrumentation, wideband or narrowband amplifiers, and jammer applications.
According to TriQuint / Qorvo, additional key features of the T2G4005528-FS include:
- Output power (P3dB): 64W at 3.3 GHz
- Linear gain: 16 dB at 3.3 GHz
- Operating voltage: 28V
- Low thermal resistance package
Evaluation boards are available upon request.
To find more information, or to purchase this product today online, please visit the T2G4005528-FS webpage. The device is also available by calling 1-800-737-6937.