Special-purpose RF Amplifiers
The models 75AP250 (75 W minimum power) and 250AP250 (250 W minimum power) special-purpose RF amplifiers offer fast blanking circuitry to eliminate noise at the conclusion of an RF pulse or series of pulses so that the effects of the applied RF can be detected and measured. Broad bandwidth (5 to 250 MHz for each amplifier) facilitates fast rise and fall times, and sharp resolution. Minimum gain (with the gain control set at maximum) is 54 dB across the rated bandwidth for the model 250AP250 and 49 dB for the model 75AP250. The gain control range is 18 dB (min) for both units. Flatness is ±1.5 dB (max) (±0.5 dB with internal leveling) for the model 250AP250; ±1 dB (max) for the model 75AP250.
Amplifier Research,
Souderton, PA (215) 723-8181.

GaAs Power Amplifier
The model AWT1903 power amplifier designed for use with PCS 1900 MHz code-division multiple access (CDMA) applications serves as a core active device building block for 1850 to 1910 MHz CDMA cellular phone transmitter functions. The power amplifier comprises a 5 V, three-stage, class AB GaAs MESFET amplifier requiring an external –3.6 V supply to establish the gate bias voltages. The IC typically exhibits 26 dB gain, –12 dB input return loss, 33 percent efficiency and an adjacent-channel power rejection (ACPR) at 1.25 MHz offset of 33 dBc at an output power of 28 dBm in the 1850 to 1910 MHz PCS band. Price: $8 (100,000).
Warren, NJ (908) 668-5000.

GaAs CATV Hybrid Amplifiers
These GaAs community antenna television (CATV) hybrid amplifiers deliver higher bandwidth, lower distortion and higher gain than their silicon counterparts. The model MC-7856 push-pull amplifier features a bandwidth of 50 to 860 MHz, gain at 860 MHz of 22 dB and noise figure at 860 MHz of 5.7 dB. The model MC-7866 power doubler amplifier features a bandwidth of 50 to 860 MHz, gain at 860 MHz of 22 dB, noise figure at 860 MHz of 5.6 dB and IDD at 24 V of 355 mA. Prices: $32 for the push-pull amplifier; $42 for the power doubler amplifier (10,000).
California Eastern Laboratories (CEL),
Santa Clara, CA (408) 988-3500.

DC - 6.5 GHz HBT GaAs MMIC Amplifiers
These heterojunction bipolar transistor (HBT) GaAs MMIC amplifiers are available in the model AHB111C chip configuration or the model AHB111C-70C ceramic package configuration. The amplifiers are designed for use as a general-purpose, 50 W gain block. Features include a gain of 16 dB (typ), operating frequency of DC to 6.5 GHz, noise figure of < 6 dB and P1dB > 14 dBm.
FEI Communications Inc., a subsidiary of Frequency Electronics Inc.,
Mitchel Field, NY (516) 794-4500.

Ka-band Low Noise and Driver Amplifiers
These Ka-band low noise and driver amplifiers for local multipoint distribution systems feature a low noise figure, gains from 15 to 50 dB, various output power levels and operation across multiple frequency ranges for each specially allocated band. The model JCA2729-501 amplifier operates from 27.5 to 29 GHz with a gain of 35 dB (min) and a noise figure of 5 dB (max). Power output at P1dB is 10 dBm (min), IP3 is +20 dB (typ), input and output SWR is 1.5 (max) and DC power is +15 V DC at 200 mA (typ).
JCA Technology Inc.,
Camarillo, CA (805) 445-9888.

8 - 12 GHz, 1 W Amplifier
The model MSH-6442601 1 W amplifier operates in the 8 to 12 GHz frequency range and is manufactured with the latest hybrid technology. The amplifier features a typical small signal gain of 30 dB, IP3 of +40 dBm and better than 3 dB noise figure. The input and output SWR is 1.8 with a maximum current of 1.2 A at +15 V DC. The unit operates at a temperature from –40° to +60°C with extended ranges available. The unit includes an internal voltage regulator and reverse polarity protection.
Microwave Solutions Inc. (MSI),
National City, CA (800) 967-4267.

GaAs MMIC Low Noise Amplifier
The model AM50-0003 800 to 1000 MHz high dynamic range, GaAs MMIC low noise amplifier is designed to enhance signal strength and clarity during a cellular connection. The unit provides lower intermodulation distortion in a wide range of applications and frequencies to provide a stronger wireless signal connection. The amplifier can be used as a low noise amplifier, gain block, LO buffer or as a driver amplifier for base stations and portables at 3 to 8 V for all systems at the cellular frequency range. Current can be controlled over a range of 20 to 80 mA with an external resistor, allowing the system designer the ability to optimize DC power consumption vs. intermodulation performance. Price: $2 (10,000).
M/A-COM Inc., |an AMP company,
Lowell, MA (800) 366-2266.

MMIC Amplifiers
The model ERA-5 wideband DC to 4000 MHz and model ERA-5SM surface-mount MMIC amplifiers provide the inexpensive signal gain (up to 18.8 dB ±1 dB flatness, typical to 2 GHz) required to overcome losses from passive circuit elements and components. Dynamic range is typically characterized by a noise figure of 4.5 dB (4.3 dB for the model ERA-5SM) and IP3 of 33 dBm (32.5 dB for the model ERA-5SM). The units are designed for long-term, trouble-free operation when used from –45° to +85°C (absolute maximum temperature). Device current is 65 mA for both units. The 50 W amplifiers are guaranteed to ship within one week. Price: $3.85 each for the model ERA-5; $3.90 each for the model ERA-5SM (30).
Brooklyn, NY (718) 934-4500.

25 W CDMA High Power Amplifier
This 25 W CDMA amplifier operates in the 869 to 894 MHz cellular frequency band. The single-channel amplifier utilizes linearization techniques to meet the demands of IS-95 spectral regrowth requirements. This technology also results in an economic solution for fixed and mobile cellular base stations, and wireless local loop systems. The unit features a gain of 60 dB and is rated for 0° to 50°C operation. Open circuit protection is provided and each unit can be controlled via a remove interface for detailed status reporting.
MPD Technologies Inc., a subsidiary of Microwave Power Devices Inc.,
Hauppauge, NY (516) 231-1400.

RF Preamplifier Module
The model 986-08680 RF preamplifier module is designed for military or commercial applications for operation in AM, FM or data modes. The 16 W PEP (8 W CW) amplifier is optimized for 28 V operation and operates from 30 to 400 MHz. The 30 dB typical gain can be controlled by an external voltage over a 50 dB range at rates up to 1 MHz, allowing wideband amplitude modulation. The unit is fabricated using gold-metallized silicon FET technology, which eliminates E-B degradation and second-breakdown failures while allowing the near-carrier broadband noise floor to be below –130 dBm/Hz.
National Communications Electronics (NCE),
Largo, FL (813) 545-3867.

2.4 GHz Single-supply Power Amplifier
The model PM2117 2.4 GHz power amplifier is rated at +29 dBm saturated output power (+27 dBm at P1dB) at 5 V with 26 dB of small signal gain in its ultra-small, proprietary PM-SOP™ plastic package. The amplifier utilizes a new GaAs MESFET IC design that eliminates the need for a negative supply voltage and incorporates both input and interstage matching on chip. The unit reduces the junction-to-ground thermal resistance to 35°C/W (typ), allowing for 1.9 W of maximum power dissipation in the plastic package. Price: $6.75 each (10,000). Delivery: stock.
Pacific Monolithics Inc.,
Sunnyvale, CA (408) 745-2700.

Wideband, mm-wave Power Amplifier Module
The model RMPA37000 wideband, mm-wave power amplifier module for use in communications systems is fabricated using an advanced power HEMT process. The unit features a wide bandwidth of 18 to 40 GHz, an output power of 200 mW, 20 dB gain (typ) and can be customized with band-limiting filters for specific applications. The module can be fitted for either coaxial or waveguide input/output ports and is hermetically sealed in an aluminum package. In addition, the module can be fitted with other mm-wave power or low noise amplifier devices that operate at 20, 30 and 40 GHz with 15 to 25 dB gain, 3 to 5 GHz bandwidth and 28 to 30 dBm of output power.
Raytheon Microelectronics,
Andover, MA (978) 470-9715.

High Power Linear Amplifier
The model RF2146 high power, high efficiency linear amplifier is designed for use as the final amplifier in four-cell CDMA hand-held digital cellular equipment and spread spectrum systems in the 1500 to 2000 MHz band. Manufactured using an advanced GaAs HBT process technology, the amplifier offers over 28 dBm linear output power with 18.5 dB gain. Typical efficiency is 37 percent for 28 dBm linear output power operating at 4.8 V. In some circumstances, efficiency can be over 40 percent and still meet CDMA ACPR.
RF Micro Devices Inc.,
Greensboro, NC (910) 664-1233, ext. 127.

Microstrip Low Noise Amplifier
The NSH series low noise amplifier utilizes MIC technology to offer a multistage microstrip chassis with high performance. Applications include use as cascadable building blocks in up- and downconverters, T/R modules and in many other types of subassemblies where cost, space efficiency and performance is critical. Delivery: four to six weeks.
Hauppauge, NY (516) 436-7400, ext. 259.

Low Noise PCS Tower-top Amplifier
The model SA1032 simplex and model SA1079 dual-duplex low noise, tower-mounted amplifiers are designed for use in PCS applications. The model SA1032 amplifier delivers 14 dB of gain with a noise figure of 2 dB and an IP3 of +8 dBm. The unit features lightning protection and an integrated low loss bandpass filter. The model SA1079 amplifier offers 12.5 dB of gain, a 2.5 dB noise figure and an IP3 of +8 dBm. The unit also is lightning protected and features integrated low loss duplexers.
Watkins-Johnson Co.,
Palo Alto, CA (800) 951-4401.