RFMW, Ltd. announces design and sales support for TriQuint SemiconductorTGF2040, a discrete 400-Micron GaAs pHEMT FET. Designed using TriQuint’s proven 0.25 um pHEMT process, power and efficiency at high drain bias operating conditions are optimized. The TriQuint TGF2040 supports circuit designs to 20 GHz with up to 26 dBm P1dB, gain up to 13 dB and 55% power-added efficiency (PAE).
The TGF2040 is constructed without via holes thereby allowing for self-biasing and eliminating the need for a negative supply voltage. Power supply requirements are reduced which is particularly useful in airborne applications such as UAVs. Along with hi-rel defense and aerospace, additional applications include test and measurement and commercial, broadband amplifiers where high efficiency and linearity are required.
The TriQuint TGF2040 is available in DIE with a silicon nitride, protective overcoat layer providing a level of environmental robustness and scratch protection. The TGF2040 is part of a family of high-efficiency pHEMT power FETs providing a broad selection of output powers.
|
Part |
12 GHz |
DC |
Gate |
Die Size |
||||||||
|
Vds = 8V, Ids = 50% Idss |
Vds = 2V |
|||||||||||
|
P1dB |
G1dB |
PAE |
NF |
Idss |
Gm |
Vp |
BVgd |
BVgs |
Rth |
|||
|
22 |
14 |
55 |
1 |
58 |
70 |
-1.0 |
-15 |
-15 |
88 |
0.25x180 |
410x340 |
|
|
24 |
14 |
58 |
0.9 |
81 |
97 |
-1.0 |
-15 |
-15 |
62.5 |
0.25x250 |
410x340 |
|
|
26 |
13 |
55 |
1.1 |
129 |
155 |
-1.0 |
-15 |
-15 |
60 |
0.25x400 |
410x340 |
|
|
28 |
12 |
55 |
1.4 |
194 |
232 |
-1.0 |
-15 |
-15 |
54 |
0.25x600 |
410x340 |
|
|
TGF2080 * |
30 |
11.5 |
60 |
– |
259 |
310 |
-1.0 |
-15 |
-15 |
45 |
0.25x800 |
410x540 |
|
TGF2120 * |
32 |
11 |
60 |
– |
388 |
464 |
-1.0 |
-15 |
-15 |
38 |
0.25x1200 |
410x540 |
|
TGF2160 * |
33 |
10.5 |
63 |
– |
517 |
619 |
-1.0 |
-15 |
-15 |
32 |
0.25x1600 |
410x540 |
*Coming Soon
