RFMW announced design and sales support for a discrete 400 Micron pHEMT which operates from DC to 20 GHz. The QPD2040D is designed using Qorvo’s proven standard 0.25 μm power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2040D typically provides 26 dBm of output power at P1dB with gain of 13 dB and 55 percent power-added efficiency at 1 dB compression making it appropriate for high efficiency applications. Bias voltage is 8 V for broadband wireless, aerospace and defense applications.