Microsemi Corp., a manufacturer of high performance analog and mixed-signal integrated circuits and high reliability semiconductors, is featuring a next-generation wideband Gap silicon carbide technology demonstration at the 2006 IEEE MTT-S in San Francisco, CA.

  • Foresees radar, broadband communications, avionics applications

  • Higher power/voltage operation

  • Higher power density

The demonstration allows users a first look at the silicon carbide RF power transistors for pulsed applications.

The superior material properties of wideband Gap silicon carbide semiconductors anticipates a new class of transistors having higher power/voltage operation and higher power density. These characteristics allow significant enhancements in pulse widths and broadband capability, as well as efficiency and robustness compared to conventional silicon semiconductors.

The power transistors line from Microsemi’s RF Power Products division, formerly a division of Advanced Power Technology, is new this year to the Microsemi booth at MTT-S. Included in this part of the exhibit are new pulsed power transistors for avionics and communications applications and high power transistors for S-band, L-band, P-band and UHF-band radar applications.

Also at the Microsemi booth are high voltage PIN switching diodes for microwave and RF application and the latest HBT InGaP power amplifiers for IEEE 802.11a/b/g wireless LAN applications.