- Buyers Guide
Richardson RFPD Inc. announces availability of the latest Silicon Carbide (SiC) power MOSFET from Cree Inc. (Cree). The second-generation SiC Z-FET™ 1200V MOSFET C2M0080120D delivers industry-leading power density and switching efficiency, at half the cost-per-amp of Cree’s previous-generation MOSFETs.
The emerging market for Silicon Carbide (SiC) and Gallium Nitride (GaN) power semiconductors is forecast to grow a remarkable factor of 18 during the next 10 years, energized by demand from power supplies, photovoltaic (PV) inverters and industrial motor drives.
Richardson RFPD Inc. announced it has completed an agreement to distribute Silicon Carbide power products from Cree Inc. Under the agreement, Richardson RFPD will distribute Cree's SiC Schotty diodes, MOSFETs and power modules worldwide.
Linear Technology Corp. introduces the LTC4364, a surge stopper with ideal diode, providing compact and low-loss protection for 4V to 80V electronics in automotive, avionics and industrial systems. The surge stopper shields downstream electronics from input overvoltages and overcurrent, enabling continuous operation through transient surges. Overcurrent limiting protects the system and supply from short-circuits at the load.
Infineon Technologies and Fairchild Semiconductor have extended their compatibility partnership to encompass Infineon’s proprietary 5 x 6 power stage asymmetric dual MOSFET package. The PowerStage 5 x 6 is a leadless SMD package, which integrates the low-side and high-side MOSFET of a synchronous DC/DC converter into a 5 by 6 mm² package outline.
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