Microwave Journal and roughly 130 exhibiting companies were in Austin during the third week of August for the 2009 IEEE EMC Symposium. Barbeque, musically-gifted engineers and that good 'ole Austin weirdness, combined with the topic of electromagnetic compatability made the event a productive and memorable one.
RF & Microwave Design Software has a colorful history. Some of the technical references used in this month's cover story (How Design Software Changed the World) is available here for your summer reading pleasure.
Deford talks to Microwave Journal about his company's recent acquisition by AWR and the future for his company’s 3D EM simulator Analyst, solving big problems with domain decomposition and integration of a new EM solver into Micorwave Office.
John Deford, Vice President of Engineering, AWR Corp., talks about the company’s new 3D EM simulator Analyst, solving big problems with domain decomposition and integration of a new EM solver into Micorwave Office.
John Deford, Vice President of Engineering, AWR Corp., talks about the company’s new 3D EM simulator Analyst, solving big problems with domain decomposition and integration of a new EM solver into Microwave Office.
Green technology has the potential to drive the next generation of research and development, boosting the high-tech economy, reducing our dependence on fossil fuels, lowering carbon emissions and addressing global warming. With these benefits in mind, RF-driven plasma lighting is gaining interest. The microwave light has an efficiency of more than 50 percent, compared with fluorescent tubes' efficiency of about 15% and traditional light bulbs, which emit only about 5 % of their energy conversion as light. This week we look at Ceravision Ltd., a leading innovator in this technology.
At last year’s IMS in Atlanta, both TriQuint and Cree rolled out competing GaN foundry services amid strong interest in the high-power RF technology. This year, RFMD took the stage to introduce their own GaN foundry services, which they did in a press conference hosted by Robert Van Buskirk, President of the company’s Multi-Market Products Group. As reported in this month’s cover story, “The New Power Brokers”, interest in GaN devices is being fueled by the high power density and high-temperature operation of these transistors.
Among the changing landscape of RF/microwave semiconductor developments, devices with material properties that can sustain high electric breakdown are of particular interest. MWJ spoke to a number of leading vendors in GaN, LDMOS and other high voltage RF technologies.
MWJ: What are the most significant benefits of GaN/LDMOS/HVFET? How does this compare to other high power devices? RFMD: GaN based amplifiers provide the following significant benefits 1) Higher efficiency for pulsed, CW saturated and linear applications which improve thermal requirements and energy usage. GaN is...