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ARTICLES

Impact of Front-end Non-idealities on Bit Error Rate Performance of WLAN-OFDM Transceivers

Results and evaluation of BER performance of a complete WLAN-OFDM transceiver
February 1, 2001
Technical Feature Impact of Front-end Non-idealities on Bit Error Rate Performance of WLAN-OFDM Transceivers This article describes origins of the use of high electron mobility field-effect transistors (HEMT) based on AlGaN/GaN technology as control components for high power microwave and RF control applications. B. Côme, R. Ness, S. Donnay,...
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