B. Come, R. Ness, S. Donnay, L. Van der Perre, W. Eberle, P. Wambacq, M. Engels, I. Bolsens

Technical Feature Impact of Front-end Non-idealities on Bit Error Rate Performance of WLAN-OFDM Transceivers This article describes origins of the use of high electron mobility field-effect transistors (HEMT) based on AlGaN/GaN technology as control components for high power microwave and RF control applications. B. Côme, R. Ness, S. Donnay,...