- Buyers Guide
Articles by RFMD
RFMD® Announces Major Gallium Nitride (GaN) Milestones. RFMD Qualifies and Releases First GaN Device. Shipments of RF3931 Unmatched Power Transistors Commence to Multiple High Power Amplifier (HPA) Manufacturers.
The RF3021 is a reflective single-pole double throw (SPDT) switch designed for general purpose switching applications which require low insertion loss and high power handling capability. Ideally suited for battery operated applications requiring low insertion loss and switching with very low DC power consumption.
The RF5602 is a linear power amplifier IC designed specifically for medium power applications. The device is manufactured on an advanced InGaP Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 802.11b/g/n access point transmitters.
RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance semiconductor components, introduced the RF6460, RFMD's most highly integrated and scalable 3G/4G cellular front end platform. The RF6460 front end platform features an ultra-compact "converged" multi-band, multimode architecture (2G/2.5G/3G/4G)
The ML5830 is a single chip fully integrated Amplitude Shift Keyed (ASK) and Frequency Shift Keyed (FSK) transmitter developed for a variety of applications operating in the 5.790GHz to 5.840GHz band. The ML5830 ASK modulator is designed for symbol rates of 512ksps, 1024ksps, and 2048ksps.
The SPA-1426Z and SPA-1526Z InGaP PAs address base station applications across all cellular standards and frequencies. Operated as Class A PAs, these devices have unmatched performance where backed off linearity is crucial to HPA performance.
The RF3161 is a high-power, high-efficiency power amplifier module with integrated power control that provides over 50 dB of control range. The device is a self-contained 6mmx6mmx1mm module with 50 Ohm input and output terminals. The device is designed for use as the final RF amplifier in GSM850, EGSM900, DCS and PCS handheld digital cellular equipment and other applications.
Available in hard copy and CD, the Designer’s Handbook showcases RFMD’s broad product portfolio of RF systems and solutions for applications that drive mobile communications.
RFMD’s newest power integrated circuit (PowerIC) broadband power amplifier (PA), operates over a very wide range of microwave frequencies, making it ideal for multiple band and broadband applications.
RFMD’s family of gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) low-noise amplifiers (LNAs), the RF386X, offer capabilities from 700 to 3800 MHz and provide the best-in-class combination of low noise and high linearity performance, as compared to competing solutions.