Articles by RFMD

RF Micro Devices Inc. (RFMD) announced that RFMD® has production released the RF3932, a 75 W, highly efficient gallium nitride (GaN) RF unmatched power transistor (UPT) that delivers superior performance versus competing GaAs and silicon power technologies. The release of the RF3932 follows the recent release of the 140...

RF Micro Devices Inc. (RFMD) announced that it has production released the RF3932, a 75 W, highly efficient gallium nitride (GaN) RF unmatched power transistor (UPT) that delivers superior performance versus competing GaAs and silicon power technologies. The release of the RF3932 follows the recent release of the 140...

RF Micro Devices (RFMD), a leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced that it has been awarded a $1.5 M R&D contract by the Office of Naval Research (ONR) related to gallium nitride (GaN) microelectronics, including the development of materials,...

RF Micro Devices Inc. (RFMD), a leader in the design and manufacture of high performance radio frequency components and compound semiconductor technologies, announced availability of the RFPD2650, a new gallium nitride-based hybrid power doubler amplifier that delivers industry-best low distortion performance with the flexibility to optimize for supply current...

RF Micro Devices Inc. (RFMD) announced that Samsung has selected three highly integrated RFMD® components to deliver superior WiFi connectivity in the recently-introduced GALAXY Tab™ Android tablet. Specifically, RFMD is supplying Samsung with the RF5521 front end module (FEM) for the low-band 2.4 GHz frequency, and the RF5515 low...

RF Micro Devices Inc. (RFMD) announced the company has added its Gallium Arsenide (GaAs) technology to RFMD's foundry services portfolio and will begin providing a full suite of GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) technologies to customers of its Foundry Services business unit. Specifically, RFMD will make available...

RF Micro Devices (RFMD), a leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the introduction of the RFUV5945A during the European Microwave Week (EuMW) 2010 Conference. The RFUV5945A I/Q up-converter is the newest addition to RFMD's rapidly growing portfolio of innovative...

RF Micro Devices Inc. (RFMD) announced the availability of the RF6515 front-end module (FEM). RFMD's feature-rich RF6515 FEM improves the performance of 2.4 to 2.5 GHz ISM band wireless applications requiring longer-range operation at high efficiency, including WLAN, Zigbee®, Smart Energy/Advanced Metering Infrastructure (AMI) and Home Area Networks (HAN)....

RF Micro Devices Inc. (RFMD), a leader in the design and manufacture of high performance radio frequency components and compound semiconductor technologies, announced the availability of the RF3482 front-end module (FEM). RFMD's highly integrated RF3482 single-chip FEM integrates a WiFi power amplifier with a single-pole, three-throw (SP3T) switch for...

RF Micro Devices Inc. (RFMD) announced availability of the RF5616, a highly integrated 4.9 to 5.8 GHz (ISM band) 3 x 3 mm power amplifier designed to significantly reduce customers' total solution size and cost. The RF5616 is targeted for high performance mobile PC and embedded applications including access...