Articles by RFMD

RF Micro Devices Inc. (RFMD), a designer and manufacturer of high-performance radio frequency components and compound semiconductor technologies, announced the release of the RFFM6201, a 2.4 GHz band single-chip Zigbee® front-end module (FEM) featuring an integrated power amplifier, low noise amplifier and diversity switch.

 

Introduction to a family of GaN HEMT-based switches that simultaneously offer higher power handling and ruggedness as well as low control current requirements

RFMD’s RFHA1000 GaN Power IC (PIC) is a wideband power amplifier designed for continuous wave and pulsed applications, such as military communications, electronic warfare, wireless infrastructure, radar, two-way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, this high performance amplifier achieves...

RFMD’s RFHA1003 GaN Power IC (PIC) is a wideband power amplifier designed for continuous wave and pulsed applications such as military communications, electronic warfare, wireless infrastructure, radar, two-way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, this high performance amplifier achieves...

RFMD's new RF3826 is a wideband power amplifier designed for continuous wave and pulsed applications, such as wireless infrastructure, Radar, two-way radios, and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, this high performance amplifier achieves high efficiency, flat gain, and large instantaneous...

RFMD 's new RFHA1023 is a 36 V 225 W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance, and general purpose broadband amplifier applications. The RFHA1023 is a high terminal impedance matched power transistor providing 225 W with 55 percent drain efficiency, packaged...

RFMD introduces the development of its GaN unmatched power transistor (UPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5 μm GaN high electron mobility transistor (HEMT) semiconductor process, these high performance amplifiers show excellent peak drain efficiency and flat gain over a broad frequency range...

RFMD announced new RF3232, RF3233 and RF3234 quad-band transmit modules for the final portion of the transmitter section in multi-mode 3G entry handsets and connected devices. These modules are the core of RFMD’s RF323x Power Platform and include 50Ω matched input and output ports, eliminating the need for external...

RF Micro Devices Inc. (RFMD) announced it has teamed with Atmel Corp. , a leader in microcontroller and touch solutions, to deliver ZigBee® solutions for a broad range of smart energy applications. RFMD's newly introduced RF6575 ZigBee front-end module (FEM) has been combined with the Atmel ATmega128RFA1 Single-Chip solution...

RF Micro Devices Inc. (RFMD) announced the expansion of its 5 GHz WiFi product portfolio to include two new 5 GHz high-band WiFi front-end modules (FEM) with integrated power amplifiers (PA). The two new 5 GHz FEMs – the RF5506 and the RF5516 -- deliver industry-leading high power and...