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ARTICLES

PIN Diode SP3T Switch: MASW-011030

MASW-011030MACOM, a leading supplier of high performance RF, microwave, and millimeter wave products announced a high power PIN diode SP3T switch in a common anode configuration, operating from 30 MHz to 3 GHz. The MASW-011030 is designed for military and civilian customers who require higher CW and pulsed power operation for radio applications.


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Surface Mount Bias Network: MABT-011000

Package Image - MABT-011000 (Standard MACOM Package Image)M/A-COM Technology Solutions Holdings Inc. (“MACOM”) announced a fully monolithic broadband surface mount bias network utilizing MACOM’s patented HMIC process. The MABT-011000 is designed for customers who need a rugged HMIC device with low loss and high performance with exceptional repeatability through millimeter frequencies.


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Low Noise Active Mixer: MAMX-011023

MAMX-011023

M/A-COM Technology Solutions Inc. ("MACOM"), a leading supplier of high performance RF, microwave, and millimeter wave products, announced that its MAMX-011023 low noise active mixer is available for sampling immediately. The market arrival of the 4 to 23 GHz MAMX-011023 discrete mixer gives system designers unrivaled flexibility to target a wide range of applications with a single mixer component.


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MACOM’s 12G-SDI chipset chosen by PHABRIX

 M/A-COM Technology Solutions Inc. (MACOM), a leading supplier of semiconductor solutions for broadcast video infrastructure, announced that PHABRIX has chosen MACOM’s 12G-SDI Chipset for its new 4K/UHDTV1 instruments with eye/jitter analysis.  


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MACOM extends GaN portfolio with new 15 W GaN on SiC pulsed power transistor

RFIC

 M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, announced a new GaN on SiC HEMT pulsed power transistor for civilian and military radar pulsed applications. 


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L-Band Radar Transistor: MAGX-001214-650L00

MAGX-001214-650L00MACOM's GaN on SiC HEMT power transistor for L-Band pulsed radar applications, the MAGX-001214-650L00, is a gold-metalized pre-matched GaN on silicon carbide transistor that offers the highest peak power in the industry for a single-ended power transistor optimized for pulsed L-Band radar applications.


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MACOM launches new 15 W X-Band high power amplifier for radar applications

 M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, announced a new high power MMIC amplifier ideal for X-Band communication and radar applications. 


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Avionics Power Module

Package Image - MAMG-000912-090PSMM/A-COM Technology Solutions Inc. (“MACOM”), announced the newest entry in its portfolio of GaN in plastic power module products. Optimized for pulsed Avionics applications in the 960 to 1215 MHz band, MACOM’s new 2-stage, fully matched GaN surface mount power module scales to peak pulse power levels of 100 W in a 14 x 24 mm package size.


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Integrated Two Stage Differential Amplifier: MAAM-011186

MAAM-011186M/A-COM Technology Solutions announced an integrated two stage differential amplifier for DOCSIS 3.0 and 3.1 reverse path infrastructure equipment. The MAAM-011186 is designed for customers who require a highly linear variable gain amplifier (VGA) solution for network access equipment and head-ends in the hybrid fiber coax (HFC) system. This device offers 39 dB of gain and 3 dB of noise figure with 31.5 dB attenuation range.


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MACOM accredited as ‘Trusted Foundry’ by Department of Defense

M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, announced that its wafer fabrication facility in Lowell, Massachusetts, has been accredited by the Department of Defense (DoD) as a Category 1A Trusted Foundry. This DoD accreditation distinguishes MACOM as a trusted manufacturer of integrated circuits (ICs) for classified and unclassified U.S. military and aerospace applications.


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