MACOM Technology Solutions Inc. (MACOM) announced the newest entry in its GaN-on-Si power transistor portfolio, designed for pulsed L-Band radar systems for airport surveillance radar (ASR).

MACOM says the MAGX-101214-500 will deliver industry-leading efficiency at peak pulse power levels up to 500 W and is expected to outperform premium-priced GaN-on-SiC-based transistors and far exceed the performance, efficiency and power density of legacy LDMOS devices.

The MAGX-101214-500 enables customers to scale to higher power levels for ASR applications at 1.2 to 1.4 GHz, delivering 500 W output power and greater than 70 percent efficiency under pulsed conditions at 50 V operation. Supplied in a small-footprint ceramic flanged package and supporting matching structures that minimize circuit size, MAGX-101214-500 transistors help enable rugged, compact radar systems with efficient, simplified cooling and power supply architectures.

The MAGX-101214-500 builds on the success of MACOM’s comprehensive portfolio of GaN-on-Si power transistors, which have demonstrated field-proven reliability in harsh environmental conditions. Over one million MACOM GaN-on-Si devices have been shipped to customers around the world.

Greg French, senior product manager for RF power at MACOM, said, “The continued expansion of MACOM’s GaN-on-Si product portfolio enables customers to address an ever-widening range of RF power requirements while achieving performance profiles that meet and exceed GaN-on-SiC, at significantly less cost at scaled volume production levels. Our proven technology leadership in GaN-on-Si, combined with our decades-long heritage in civil and defense radar, are among the many factors fueling our innovation in these important markets, as evidenced by the new MAGX-101214-500.”

MACOM will showcase the MAGX-101214-500 at European Microwave Week (EuMW), October 10-12, Nuremberg, Germany, at MACOM Stand #200.