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A Highly Linear 17 to 24 GHz SMT Power Amplifier

Introduction to a new surface-mount technology-packaged power amplifier for wireless communications applications
A new surface-mount technology (SMT)-packaged power amplifier has been introduced for wireless communications applications, including millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), satellite communications (SATCOM) and very small aperture terminal (VSAT) use. The model XP1000P1 GaAs MMIC surface-mount power amplifier is a two-stage amplifier optimized for linear output...
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A Broadband Hybrid Solid-state and TWT Amplifier

Development of a broadband microwave amplifier for testing in the 800 MHz to 18 GHz frequency range
Test applications that require microwave power from 1 to 18 GHz are usually addressed by two amplifiers, a solid-state unit to cover the low frequency range and a traveling-wave tube amplifier (TWTA) for the higher range. The input signal must be switched between the two amplifiers and, if there...
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<I>Microwave Journal</I>'s second annual overview of microwave technology research projects currently being investigated by European academic institutions and commercial organizations
Today's investment in and commitment to meaningful, commercially viable research will determine the shape and prosperity of tomorrow's microwave industry. Following its introduction in 2001 the second Microwave Journal guide to European research projects highlights the studies being undertaken by academic and commercial establishments to develop the innovations that...
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Design of a Generic 2.5 W, 60 Percent Bandwidth, C-band MMIC Amplifier

Description of the design and test data of a generic 2.5 W, two-stage, C-band MMIC power amplifier
During the past decade, there has been significant progress in monolithic power amplifiers operating at RF and microwave frequencies over narrow and broadbands for both commercial and military applications. For numerous applications, including handsets, VSAT and transmit/receive modules, these amplifiers are produced in large quantities using MESFET, HBT and...
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Low Cost Millimeter-wave Packaged MMICs

A surface-mount device-packaged MMIC chipset for 26 GHz point-to-point and point-to-multipoint radio links is featured
Cover Feature Low Cost Millimeter-wave Packaged MMICs United Monolithic Semiconductors S.A.S. Orsay Cedex, France Millimeter-wave technology is being recognized as having potential for emerging markets, such as broadband radio links for cellular base station backhaul networking and automotive safety systems. For such development to occur, however, the requested volumes...
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LDMOS Linearity and Reliability

Introduction to a self-aligned shadow isolated LDMOS device designed to improve linearity and reliability
Technical Features LDMOS Linearity and Reliability Laterally diffused metal-oxide-semiconductor (LDMOS) devices have been available as high power, low frequency amplifiers for almost three decades. The original devices had problems with linearity and reliability. More recent developments have improved the device performance and make LDMOS suitable in cellular base station...
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Q- and V-band MMIC Low Noise Amplifiers

Demonstration of a design method for Q- and V-band low noise amplifiers based on a distributed pHEMT model and exact simulation
Technical Feature Q- and V-band MMIC Low Noise Amplifiers This article describes MMIC low noise amplifiers for millimeter-wave applications using 0.15 µ m pHEMT technology. The design emphasis is on the active device model. The deficiency of conventional device models is identified. A distributed device model has been adapted...
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Gain for Compressed Amplifiers

Examination of two approaches to the concept of gain, differential and ratiometric in compressed amplifiers
Tutorial Gain for Compressed Amplifiers There is growing interest in operating amplifiers into compression to achieve higher power-conversion efficiencies. It becomes constructive then to revisit the concept of amplifier gain, because when an amplifier operates in compression the general assumption that the output signal is directly proportional to the...
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A Distributed Amplifier for 40 Gbps Fiber-optic Communications Systems

Description of a distributed amplifier for a LiNbO<sub>3</sub> modulator driver using double-doped AlGaAs/AlGaAs pseudomorphic HEMTs
Technical Feature A Distributed Amplifier for 40 Gbps Fiber-optic Communications Systems H. Shigematsu, M. Sato, T. Hirose and Y. Watanabe Fujitsu Laboratories Ltd. Atsugi, Japan In recent years, the rapid development of multimedia communications has generated a strong demand for high speed and high capacity transmission systems. Wavelength-division multiplexing...
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Design of a Predistortive High Power Amplifier Using Carrier Complex Power Series Analysis

Introduction to a new carrier complex power series for linearizing the distortion effects of a high power amplifier
Technical Feature Design of a Predistortive High Power Amplifier Using Carrier Complex Power Series Analysis In this article, a new carrier complex power series for linearizing the distortion effects of a high power amplifier (HPA) is proposed. The amplitude (AM-to-AM) and phase (AM-to-PM) nonlinear characteristics of the HPA are...
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