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Amplifiers

A Cost-effective 2 W GaAs MMIC Amplifier Solution

GaAs HBT technology has been successfully deployed for low to mid-power MMIC RF amplifiers in recent years. EiC Corp. pioneered the use of an InGaP emitter for RF power amplifiers and first introduced gain block products in 1998. InGaP/GaAs HBT devices have proven to provide better performance and be...
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Effects of AM/AM and AM/PM Distortion on Spectral Regrowth in 3GPP W-CDMA BS Power Amplification

The effects of amplitude and phase nonlinearities in a power amplifier, which lead to spectral regrowth, are examined in the context of a 3GPP W-CDMA forward link (base station) environment. Behavioral modeling and simulation techniques are applied fir...
The transmitter unit, contained in base stations for third generation cellular systems, requires a linear power amplifier to preserve signal integrity when amplifying composite signals associated with multiple channels. While the power amplifier must meet a number of requirements to be system level compliant, the design process generally emphasizes...
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Using Load Pull Analysis and Device Model Validation to Improve MMIC Power Amplifier Design Methodologies

This article describes a methodology for the design of a 2 GHz monolithic microwave integrated circuit (MMIC) power amplifier (PA) using a heterojunction bipolar transistor (HBT) process. It is based on the use of modern software tools and advanced loa...
There is certainly no shortage of information about designing power amplifiers these days, and several books address the subject quite admirably. 1-6 However, as well as these books cover the theory and underlying logic of such designs, they do not tell the reader precisely how to do it. As...
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Design Advantages of CDMA Power Amplifiers Built with MOSFET Technology

CDMA power amplifiers are now being produced in volume using MOSFET technology, enabling improvements in amplifier performance and system cost. This article discusses the design characteristics of these very flexible and stable devices and explains how...
Each of the many process technologies that can be used for RF power amplifiers - GaAs HBT, PHEMT, InGaP HBT and silicon RF MOSFET - have different advantages, such as better frequency characteristics, wider linearity and higher power capability. A fundamental comparison of the different process technologies is shown...
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A Highly Linear 17 to 24 GHz SMT Power Amplifier

Introduction to a new surface-mount technology-packaged power amplifier for wireless communications applications
A new surface-mount technology (SMT)-packaged power amplifier has been introduced for wireless communications applications, including millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), satellite communications (SATCOM) and very small aperture terminal (VSAT) use. The model XP1000P1 GaAs MMIC surface-mount power amplifier is a two-stage amplifier optimized for linear output...
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A Broadband Hybrid Solid-state and TWT Amplifier

Development of a broadband microwave amplifier for testing in the 800 MHz to 18 GHz frequency range
Test applications that require microwave power from 1 to 18 GHz are usually addressed by two amplifiers, a solid-state unit to cover the low frequency range and a traveling-wave tube amplifier (TWTA) for the higher range. The input signal must be switched between the two amplifiers and, if there...
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Research@mwjournal.com

<I>Microwave Journal</I>'s second annual overview of microwave technology research projects currently being investigated by European academic institutions and commercial organizations
Today's investment in and commitment to meaningful, commercially viable research will determine the shape and prosperity of tomorrow's microwave industry. Following its introduction in 2001 the second Microwave Journal guide to European research projects highlights the studies being undertaken by academic and commercial establishments to develop the innovations that...
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Design of a Generic 2.5 W, 60 Percent Bandwidth, C-band MMIC Amplifier

Description of the design and test data of a generic 2.5 W, two-stage, C-band MMIC power amplifier
During the past decade, there has been significant progress in monolithic power amplifiers operating at RF and microwave frequencies over narrow and broadbands for both commercial and military applications. For numerous applications, including handsets, VSAT and transmit/receive modules, these amplifiers are produced in large quantities using MESFET, HBT and...
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Low Cost Millimeter-wave Packaged MMICs

A surface-mount device-packaged MMIC chipset for 26 GHz point-to-point and point-to-multipoint radio links is featured
Cover Feature Low Cost Millimeter-wave Packaged MMICs United Monolithic Semiconductors S.A.S. Orsay Cedex, France Millimeter-wave technology is being recognized as having potential for emerging markets, such as broadband radio links for cellular base station backhaul networking and automotive safety systems. For such development to occur, however, the requested volumes...
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LDMOS Linearity and Reliability

Introduction to a self-aligned shadow isolated LDMOS device designed to improve linearity and reliability
Technical Features LDMOS Linearity and Reliability Laterally diffused metal-oxide-semiconductor (LDMOS) devices have been available as high power, low frequency amplifiers for almost three decades. The original devices had problems with linearity and reliability. More recent developments have improved the device performance and make LDMOS suitable in cellular base station...
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