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ARTICLES

A Cost-effective 2 W GaAs MMIC Amplifier Solution

EiC Corp.
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GaAs HBT technology has been successfully deployed for low to mid-power MMIC RF amplifiers in recent years. EiC Corp. pioneered the use of an InGaP emitter for RF power amplifiers and first introduced gain block products in 1998. InGaP/GaAs HBT devices have proven to provide better performance and be...
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WCDMA Application of Gain Blocks

Description of the detailed operating characteristics of InGaP HBT gain block products that are widely used in 2G, 2.5G and 3G applications
EiC Corp.
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Product Feature WCDMA Application of Gain Blocks EiC Corp. Fremont, CA This article deals with the detailed operating characteristics of InGaP HBT gain block products that are widely used in 2G, 2.5G and 3G applications, using 3G WCDMA as the example. The linearity, expressed by adjacent channel leakage ratio...
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A 1 W, 900 MHz HBT Power Amplifier

A heterojunction bipolar transistor (HBT) power amplifier specifically optimized to privide high power and efficiency while operating from a +3.6 to +6 V DC supply
EiC Corp.
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A 1 W, 900 MHz HBT Power Amplifier EiC Corp.Fremont, CA Today’s cellular and portable communications equipment is expected to feature high power and efficiency while operating from a single low voltage supply. The system’s power amplifier must be able to meet these qualifications. The model ES-2067 GaAs heterojunction...
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